2SC3357 Key Features
- Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.
- Large PT in Small Package PT : 2 W with 16 cm2
- RoHS pliant with Halogen-free
- Part: 2SC3357
- Manufacturer: Galaxy Microelectronics
- Size: 502.60 KB
Other 2SC3357 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
2SC3357 | NPN Silicon Transistor |
Unisonic Technologies |
2SC3357 | NPN EPITAXIAL SILICON RF TRANSISTOR |
CEL |
2SC3357 | NPN SILICON RF TRANSISTOR |
Kexin Semiconductor |
2SC3357 | NPN Silicon RF Transistor |
Inchange Semiconductor |
2SC3357 | Silicon NPN RF Transistor |
2SC3357 Description
Product Specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD.
2SC3357 Applications
- The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band