Full PDF Text Transcription for 2SD1760 (Reference)
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2SD1760. For precise diagrams, and layout, please refer to the original PDF.
Power Transistor FEATURES Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) Complements the 2SB1184. APPLICATIONS Epitaxial planar type. NPN silicon transistor. P...
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184. APPLICATIONS Epitaxial planar type. NPN silicon transistor. Pb Lead-free Production specification 2SD1760 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 3A ICP Collector Current(Pulse) 4.5 A IB Base Current 1A PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W016 Rev.A www.gmesemi.
2SD1760 Datasheet
