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GME

2SD1760 Datasheet Preview

2SD1760 Datasheet

Power Transistor

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Power Transistor
FEATURES
Low VCE(sat).
VCE(sat)=0.5V(Typ.)
(IC/IB=2A/0.2A)
Complements the 2SB1184.
APPLICATIONS
Epitaxial planar type.
NPN silicon transistor.
Pb
Lead-free
Production specification
2SD1760
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current(DC)
3A
ICP Collector Current(Pulse)
4.5 A
IB Base Current
1A
PC Collector Power Dissipation
1.5 W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
W016
Rev.A
www.gmesemi.com
1




GME

2SD1760 Datasheet Preview

2SD1760 Datasheet

Power Transistor

No Preview Available !

Production specification
Power Transistor
2SD1760
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
VCBO
VCEO
VEBO
IC=50uA,IE=0
IC=1mA,IB=0
IE=50uA,IC=0
60
50
5
Collector cut-off current
ICBO
VCB=40V,IE=0
1.0
UNIT
V
V
V
uA
Emitter cut-off current
IEBO
VEBO=4V,IC=0
1.0 uA
DC current gain
hFE VCE=3V,IC=0.5A
82
390
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
IC/IB =2A/0.2A
VCE=5V,IE=-500mA
f=30MHz
VCB=10V,IE=0,f=1MHz
0.5 1.0 V
90 MHz
40 pF
CLASSIFICATION OF hFE(1)
Rank
P
Range
82-180
Q
120-270
R
180-390
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
W016
Rev.A
www.gmesemi.com
2


Part Number 2SD1760
Description Power Transistor
Maker GME
PDF Download

2SD1760 Datasheet PDF






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