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2SD1767 - Medium Power Transistor

Key Features

  • High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature.
  • 1. Pw=10ms.
  • 2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter satu.

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SMD Type Medium Power Transistor 2SD1767 Transistors Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature *1. Pw=10ms. *2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Forward current transfer ratio Transition frequency Output capacitance Symbol VCBO VCEO VEBO IC IC (Pulse) *1 PC PC *2 Tj Tstg Rating 80 80 5 0.7 1 0.