Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 1A
- High DC Current Gain
: hFE= 1000(Min.) @ IC= 1A, VCE= 2V
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier...
