BL3402 Description
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3402.
BL3402 Key Features
- Electrostatic Sensitive Devices
- VDS (V) = 30V
- ID = 4 A
- RDS(ON) < 55mΩ (VGS = 10V)
- Part: BL3402
- Manufacturer: Galaxy Microelectronics
- Size: 370.75 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL3400 | N-Channel Power Mosfet |
| BL3401 | P-Channel High Density Trench MOSDET |
| BL3401L | P-Channel MOSDET |
| BL3404 | N-Channel Power Mosfet |
| BL3407 | P-Channel Power Mosfet |