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MMST3906 - PNP Silicon Epitaxial Planar Transistor

Features

  • Power dissipation.
  • Epitaxial planar die construction.
  • Complementary to MMST3904.
  • Also available in lead free version. Pb Lead-free MMST3906.

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Full PDF Text Transcription

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Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.  Epitaxial planar die construction.  Complementary to MMST3904.  Also available in lead free version. Pb Lead-free MMST3906 APPLICATIONS  General purpose application and switching application. ORDERING INFORMATION Type No. Marking MMST3906 K5N SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -40 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -200 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F052 Rev.A www.gmesemi.
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