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GE02N60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

The GE02N60 provide the designer with the best combination of fast switching.

The TO-220 package is universally preferred for all commercial-industrial applications.

The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment.

Dynamic dv/dt Rating Sim

Features

  • Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 ±20 2 1.26 6 3.

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Datasheet preview – GE02N60

Datasheet Details

Part number GE02N60
Manufacturer GTM
File Size 281.35 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GE02N60 Datasheet
Additional preview pages of the GE02N60 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE :2005/12/12B GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 9 2A Description The GE02N60 provide the designer with the best combination of fast switching. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.
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