GE02N60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GE02N60

Datasheet Details

Part number	GE02N60
Manufacturer	GTM
File Size	281.35 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GE02N60 Datasheet
Additional preview pages of the GE02N60 datasheet.

Product details

Description

The GE02N60 provide the designer with the best combination of fast switching. Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

Features

Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 ±20 2 1.26 6 3.

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Published: Sep 22, 2007 |