GS61008P Datasheet - GaN Systems

100V enhancement mode GaN transistor

GS61008P Features

* 100 V enhancement mode power transistor

* Bottom-side cooled configuration

* RDS(on) = 7 mΩ

* IDS(max) = 90 A

* Ultra-low FOM die

* Low inductance GaNPX® package

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant gate

GS61008P General Description

The GS61008P is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology®.

GS61008P Datasheet (827.41 KB)

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Datasheet Details

Part number:

GS61008P

Manufacturer:

GaN Systems

File Size:

827.41 KB

Description:

100v enhancement mode gan transistor.

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GS61008P 100V enhancement mode GaN transistor GaN Systems

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GS61008P Features

GS61008P General Description

Datasheet Details

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