GSM02P15JZF Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
GSM02P15JZF Key Features
- 150V/-1A,RDS(ON)=750mΩ@VGS=-1V
- Improved dv/dt capability
- Fast switching
- Green Device Available