GSM10N10DF Description
The GSM10N10DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The GSM10N10DF meet the RoHS and Green Product requirement with full function reliability approved. Packages & Pin Assignments GSM10N10DF (TO-252).
GSM10N10DF Key Features
- 100V, 9A, RDS(ON)=152mΩ@VGS=20V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- To-252 package design