GSM2319P Datasheet (Globaltech)

GSM2319P - P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes

GSM2319P Features

* -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Suit for -1.5V Gate Drive Applications

* Green Device Available

* SOT-323 package design Applications

* Notebook

* Load Switch

* Hand-held Ins