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GSM2519 - MOSFET

Globaltech

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Datasheet Details

Part number	GSM2519
Manufacturer	Globaltech
File Size	1.67 MB
Description	MOSFET
Datasheet	GSM2519-Globaltech.pdf

GSM2519 Product details

Description

GSM2519, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

N-Channel 20V/4.5A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=80mΩ@VGS=1.8V.
P-Channel -20V/-4.5A,RDS(ON)=90mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=130mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=190mΩ@VGS=-1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
DFN2X2-6L package design.

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Published: Sep 9, 2018 |