GSM3401S Description
GSM3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM3401S Key Features
- 30V/-4.0A RDS(ON)=65mΩ@VGS=-10V
- 30V/-3.2A RDS(ON)=80mΩ@VGS=-4.5V
- 30V/-1.0A RDS(ON)=105mΩ@VGS=-2.5V
- Suit for -2.5V Gate Drive