GSM3406AS Description
GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM3406AS Key Features
- 30V/2.8A,RDS(ON)=45mΩ@VGS=10V
- 30V/2.4A,RDS(ON)=55mΩ@VGS=4.5V
- Super high density cell design for extremely
- SOT-23 package design