GSM6562 Description
GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM6562TSF(TSOP-6).
GSM6562 Key Features
- 30V/3.6A,RDS(ON)=70mΩ@VGS=10V
- 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V
- 30V/2.2A,RDS(ON)=95mΩ@VGS=2.5V
- Super high density cell design for extremely
- TSOP-6 package design