GSM8931 Description
GSM8931, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM8931 Key Features
- 30V/-4.6A,RDS(ON)=36mΩ@VGS=-10V
- 30V/-3.6A,RDS(ON)=46mΩ@ VGS=-4.5V
- Super high density cell design for extremely low
- SOT-89-3L package design