GSMBSS84 60V P-Channel Enhancement Mode MOSFET
• -60V/-0.13A,RDS(ON)=10Ω@VGS=-5V
• Super high density cell design for extremely
low RDS (ON)
• Exceptional on-resistance and maximum DC
current capability
Features
• -60V/-0.13A,RDS(ON)=10Ω@VGS=-5V
• Super high density cell design for extremely
low RDS (ON)
• E.
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