GSMBSS123 Description
The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
GSMBSS123 Key Features
- 100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V
- SOT-23 package design
- Lead(Pb)-Free