GSMDEW2210 Datasheet - Globaltech

Dual N-Channel MOSFET

GSMDEW2210 Features

* 20V, 7.5A, RDS(ON)=12mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 1.8V Gate Drive Applications

* G-S ESD protection diode embedded

* Green Device Available

* TSSOP-8 & SOP-8 package design Applications

* Noteboo

GSMDEW2210 General Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSMDEW2210 Datasheet (555.57 KB)

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Datasheet Details

Part number:

GSMDEW2210

Manufacturer:

Globaltech

File Size:

555.57 KB

Description:

Dual n-channel mosfet.

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GSMDEW2210 Dual N-Channel MOSFET Globaltech

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GSMDEW2210 Features

GSMDEW2210 General Description

Datasheet Details

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