Datasheet4U Logo Datasheet4U.com

KDS3512 Datasheet - Guangdong Kexin Industrial

80V N-Channel PowerTrench MOSFET

KDS3512 Features

* 4.0 A, 80 V. RDS(ON) = 70m RDS(ON) = 80m @ VGS = 10 V @ VGS = 6 V Low gate charge (13 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to

KDS3512 Datasheet (92.80 KB)

Preview of KDS3512 PDF

Datasheet Details

Part number:

KDS3512

Manufacturer:

Guangdong Kexin Industrial

File Size:

92.80 KB

Description:

80v n-channel powertrench mosfet.

📁 Related Datasheet

KDS3601 100V Dual N-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)

KDS3912 100V Dual N-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)

KDS Intrusion Switches (ITT Industries)

KDS112 SILICON EPITAXIAL TYPE DIODE (KEC)

KDS112E SILICON EPITAXIAL TYPE DIODE (KEC)

KDS113 SILICON EPITAXIAL TYPE DIODE (KEC)

KDS114 SILICON EPITAXIAL PLANAR DIODE (KEC)

KDS114E SILICON EPITAXIAL PLANAR DIODE (KEC)

KDS114V SILICON EPITAXIAL PLANAR DIODE (KEC)

KDS115 SILICON EPITAXIAL PLANAR DIODE (KEC)

TAGS

KDS3512 80V N-Channel PowerTrench MOSFET Guangdong Kexin Industrial

Image Gallery

KDS3512 Datasheet Preview Page 2

KDS3512 Distributor