Part number: HM2314
Manufacturer: H&M Semiconductor
File Size: 454.59KB
Download: 📄 Datasheet
Description: N-Channel Enhancement Mode Power MOSFET
Part number: HM2314
Manufacturer: H&M Semiconductor
File Size: 454.59KB
Download: 📄 Datasheet
Description: N-Channel Enhancement Mode Power MOSFET
* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired
* Su.
The HM2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
.
Image gallery
TAGS
📁 Related Datasheet
HM2310 - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM2310
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.
HM2310B - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM2310B
N Channel Enhancement Mode MOSFET
DESCRIPTION
The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced .
HM2310C - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM&
N Channel Enhancement Mode MOSFET
DESCRIPTION
The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced.
HM2310PR - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
M
Description
The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
HM2312 - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM2312
N-Channel Enhancement Mode Power MOSFET
Description
The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.
HM2312B - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM2312B
N-Channel Enhancement Mode Power MOSFET
Description
The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
HM2314B - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM2314B
N-Channel Enhancement Mode Power MOSFET
Description
The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
HM2318 - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
+0
N-Channel 40V(D-S) MOSFET
GENERAL DESCRIPTION
The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produc.
HM2318A - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM2318A
N-Channel 40V(D-S) MOSFET
GENERAL DESCRIPTION
The HM2318A is the N-Channel logic enhancement mode power field effect transistors are produced.
HM2318APR - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM2318$35
N-Channel 40V(D-S) MOSFET
GENERAL DESCRIPTION
The HM$35 is the N-Channel logic enhancement mode power field effect transistors are pro.
