Datasheet4U.com - HM2314

HM2314 Datasheet, H&M Semiconductor

HM2314 Datasheet, mosfet equivalent, H&M Semiconductor

Page 1 of HM2314 Page 2 of HM2314 Page 3 of HM2314

HM2314 mosfet equivalent

  • n-channel enhancement mode power mosfet.
  • Preview is limited to up to three pages.

PDF File Details

Part number: HM2314

Manufacturer: H&M Semiconductor

File Size: 454.59KB

Download: 📄 Datasheet

Description: N-Channel Enhancement Mode Power MOSFET

📥 Download PDF (454.59KB) Datasheet Preview: HM2314

PDF File Details

Part number: HM2314

Manufacturer: H&M Semiconductor

File Size: 454.59KB

Download: 📄 Datasheet

Description: N-Channel Enhancement Mode Power MOSFET

HM2314 Features and benefits

HM2314 Features and benefits


* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired
* Su.

HM2314 Description

HM2314 Description

The HM2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features
.

Image gallery

Page 1 of HM2314 Page 2 of HM2314 Page 3 of HM2314

TAGS

HM2314
N-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

📁 Related Datasheet

HM2310 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2310 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM2310B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2310B N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced .

HM2310C - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM& N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced.

HM2310PR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2312 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2312 N-Channel Enhancement Mode Power MOSFET Description The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM2312B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2312B N-Channel Enhancement Mode Power MOSFET Description The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2314B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2314B N-Channel Enhancement Mode Power MOSFET Description The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2318 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
+0 N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produc.

HM2318A - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2318A N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM2318A is the N-Channel logic enhancement mode power field effect transistors are produced.

HM2318APR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2318$35 N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM$35 is the N-Channel logic enhancement mode power field effect transistors are pro.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts