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HM4963 - Dual P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V D1 G1 G2 D2 S1 S2 Schematic diagram HM4963.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number HM4963
Manufacturer H&M Semiconductor
File Size 633.20 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4963 Datasheet
Additional preview pages of the HM4963 datasheet.

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Full PDF Text Transcription

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HM4963 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.
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