IRF512, IRF510 Datasheet - Harris Corporation

IRF512 (IRF510 - IRF513) N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF512 Features

* 4.9A, and 5.6A, 80V and 100V

* rDS(ON) = 0.54Ω and 0.74Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literat

IRF510_HarrisCorporation.pdf

IRF512 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF512, IRF510. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF512, IRF510

Manufacturer:

Harris Corporation

File Size:

Direct Link

Description:

(irf510 - irf513) n-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRF512, IRF510.
Please refer to the document for exact specifications by model.

IRF512 Distributor

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TAGS

IRF512 IRF510 IRF510 IRF513 N-Channel Power MOSFETs Harris Corporation