(irf510 - irf513) n-channel power mosfets.
* 4.9A, and 5.6A, 80V and 100V
* rDS(ON) = 0.54Ω and 0.74Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switc.
such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power.
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