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4AM11 Datasheet - Hitachi Semiconductor

Silicon N-Channel/P-Channel Power MOS FET Array

4AM11 Features

* Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS =

* 10 V, ID =

* 2.5 A

* Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H

4AM11 Datasheet (125.20 KB)

Preview of 4AM11 PDF

Datasheet Details

Part number:

4AM11

Manufacturer:

Hitachi Semiconductor

File Size:

125.20 KB

Description:

Silicon n-channel/p-channel power mos fet array.

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4AM11 Silicon N-Channel P-Channel Power MOS FET Array Hitachi Semiconductor

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