4AM11 array equivalent, silicon n-channel/p-channel power mos fet array.
* Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS =
–10 V, ID =
–2.5 A
*
based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other .
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