CS3N50B3HY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS3N50B3HY
Manufacturer	Huajing Microelectronics
File Size	200.99 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3N50B3HY-HuajingMicroelectronics.pdf

CS3N50B3HY Product details

Description

VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 2.4 Ω switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |