Datasheet Details
| Part number | 2SB1038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.52 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 2SB1038 Datasheet
|
|
|
| Part number | 2SB1038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.52 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
2SB1038 Datasheet
|
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1038 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
isc Silicon PNP Power Transistor 2SB1038.
| Part Number | Description |
|---|---|
| 2SB1031 | PNP Transistor |
| 2SB1032 | PNP Transistor |
| 2SB1033 | PNP Transistor |
| 2SB1034 | PNP Transistor |
| 2SB1037 | PNP Transistor |
| 2SB1005 | PNP Transistor |
| 2SB1007 | PNP Transistor |
| 2SB1009 | PNP Transistor |
| 2SB1015 | PNP Transistor |
| 2SB1016 | PNP Transistor |