Datasheet4U Logo Datasheet4U.com

2SD1114 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High DC Current Gain : hFE= 500(Min) @IC= 4A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenoid/ relay drivers Motor control El

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1110 SILICON POWER TRANSISTOR SavantIC
2SD1111 NPN TRANSISTOR Sanyo Semicon Device
2SD1113 Silicon NPN Power Transistor Inchange Semiconductor
2SD1113 NPN TRANSISTOR Hitachi Semiconductor
2SD1113 Silicon NPN Transistor Renesas

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD111 Silicon NPN Power Transistor
2SD1110 NPN Transistor
2SD1115 NPN Transistor
2SD1124 NPN Transistor
2SD1128 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1114 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid/ relay drivers ·Motor control ·Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.