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2SD1300 - NPN Transistor

General Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) Low Collector Saturation Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for color TV horizontal output applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1300 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1500 V 600 V 5 V 3.0 A 3.0 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.