2SD1301 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 1A Wide area of safe operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

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2SD1301 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1301
Manufacturer	Inchange Semiconductor
File Size	191.85 KB
Description	NPN Transistor
Datasheet	2SD1301 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 1A ·Wide area of safe operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.