Datasheet Details
| Part number | 2SD1360 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.21 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1360 Datasheet
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General Description
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 4A
High DC Current Gain
: hFE= 600(Min) @ IC= 2A, VCE= 2V
Fast Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable