Datasheet4U Logo Datasheet4U.com

2SD1362 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector Power Dissipation- : PC= 40W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A Complement to Type 2SB992 Minimum Lot-to-Lot variations for robust device performance and reliable operat

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1362 Silicon NPN Transistor Toshiba
2SD1360 Silicon NPN Transistor Toshiba
2SD1361 Silicon NPN Transistor Toshiba
2SD1363 Silicon NPN Transistor Toshiba
2SD1366 Silicon NPN Transistor Hitachi Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1360 NPN Transistor
2SD1361 NPN Transistor
2SD1365 NPN Transistor
2SD130 NPN Transistor
2SD1300 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1362 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A ·Complement to Type 2SB992 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications.