High Collector-Base Voltage
: V(BR)CBO= 800V(Min)
Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2A
High Speed Switching
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching regulators
Motor control sys
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1365
DESCRIPTION ·High Collector-Base Voltage
: V(BR)CBO= 800V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Motor control systems. ·Power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@Ta=25℃ Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
5
A
1.
2SD1365 Datasheet
