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2SD1414 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V Complement to Type 2SB1024 Minimum Lot-to-Lot variations for robust device performance and re

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isc Silicon NPN Darlington Power Transistor 2SD1414 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V ·Complement to Type 2SB1024 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Hammer driver,pulse motor driver applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.