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2SD226 - NPN Transistor

General Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested

and reliable operation.

Designed for general-purpose power amplifier and switching applications ABSOLUTE MA

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD226 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 50 V 40 V 8 V 3 A ICM Collector Current-Peak 5 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.