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2SD312 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD312 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=100℃ Tj Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.