2SD314 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A Complement to Type 2SB508 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the out

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2SD314 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD314
Manufacturer	Inchange Semiconductor
File Size	187.26 KB
Description	NPN Transistor
Datasheet	2SD314 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD314 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB508 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 60 V 60 V 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8.0 A 1.