2SD316 transistor equivalent, npn transistor.
*Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 5.0A
*Excellent Safe Operating Area
*Minimum Lot-to-Lot variations for robust device
performance and reli.
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