Datasheet Details
| Part number | 2SD317 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 181.14 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD317-INCHANGE.pdf
|
| Part number | 2SD317 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 181.14 KB |
| Description | NPN Transistor |
| Datasheet |
2SD317-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 60 V 60 V 8 V
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