Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.0A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general purpose power amplifier
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD317
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
60
V
60
V
8
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
5.0
A
1.
2SD317 Datasheet
