2SD317 transistor equivalent, npn transistor.
*Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.0A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*De.
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