Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
Good Linearity of hFE
Complement to Type 2SB527
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Full PDF Text Transcription for 2SD357 (Reference)
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 ·Minimum Lot-to...
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Min) ·Good Linearity of hFE ·Complement to Type 2SB527 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD357 isc website：www.iscsemi.
2SD357 Datasheet
