2SD357 transistor equivalent, silicon npn power transistor.
*Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*Good Linearity of hFE
*Complement to Type 2SB527
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for AF high p.
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