Datasheet Details
| Part number | 3CD9C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.07 KB |
| Description | PNP Transistor |
| Datasheet | 3CD9C-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors INCHANGE Semiconductor 3CD9C.
| Part number | 3CD9C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.07 KB |
| Description | PNP Transistor |
| Datasheet | 3CD9C-INCHANGE.pdf |
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·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation@Tc=75℃ 150 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.66 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor 3CD9C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ;
IB= 0 VEBO(BR) Emitter-Base Breakdown Voltage IE=- 10mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
3CD910 | SILICON PNP TRANSISTOR | LZG |
|
3CD940 | SILICON PNP TRANSISTOR | LZG |
| Part Number | Description |
|---|---|
| 3CD9A | PNP Transistor |
| 3CD9B | PNP Transistor |
| 3CD9D | PNP Transistor |
| 3CD9F | PNP Transistor |
| 3CD3C | PNP Transistor |
| 3CD6D | PNP Transistor |
| 3CD834 | PNP Transistor |