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3CD9F - PNP Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -7.5A DC Current Gain- : hFE=15-120@IC= -7.5A,，VCE=-5V 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amp

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -7.5A ·DC Current Gain- : hFE=15-120@IC= -7.5A,，VCE=-5V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation 150 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.
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