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3CD9F Datasheet Preview

3CD9F Datasheet

PNP Transistor

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isc Silicon PNP Power Transistors
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max.)@ IC= -7.5A
·DC Current Gain-
: hFE=15-120@IC= -7.5A,VCE=-5V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
PC
Collector Power Dissipation
150
W
TJ
Junction Temperature
175
Tstg
Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.66 /W
3CD9F
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

3CD9F Datasheet Preview

3CD9F Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 5mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= 0.75A
VBE(sat) Base-Emitter Saturation Voltage
IC= -7.5A; IB= 0.75A
ICEO
Collector Cutoff Current
VCE=- 300V; IB= 0
ICBO
Collector Cutoff Current
VCB=- 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -7.5A; VCE= -5V
3CD9F
MIN MAX UNIT
-300
V
-1.5
V
-1.8
V
-2.0
mA
-1.0
mA
-1.0
mA
15
120
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 3CD9F
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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3CD9F Datasheet PDF





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