| Part number | BD648F |
|---|---|
| Datasheet | BD648F-INCHANGE.pdf |
| File Size | 210.76 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD648F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD648 | PNP SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
 |
BD648 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD648 | Power Transistor | Comset Semiconductors |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD648 | PNP Transistor |
| BD643 | NPN Transistor |
| BD643F | NPN Transistor |
| BD645 | NPN Transistor |
| BD645F | NPN Transistor |
| BD646 | PNP Transistor |
| BD646F | PNP Transistor |
| BD647 | NPN Transistor |
| BD647F | NPN Transistor |
| BD649 | NPN Transistor |
