Datasheet Details
| Part number | HLB123D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.63 KB |
| Description | NPN Transistor |
| Datasheet |
 HLB123D Datasheet
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| Part number | HLB123D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.63 KB |
| Description | NPN Transistor |
| Datasheet |
HLB123D Datasheet
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·High voltage ·High speed switching ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The HLB123D is designed for high voltage,high speed switching inductive circuits and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCER Collector-Emitter Voltage RBE=150Ω 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 1 A 30 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ HLB123D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC=100mA;
IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=300mA;
IB= 30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC=100mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
HLB123D | NPN Transistor | Hi-Sincerity Mocroelectronics |
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HLB123I | NPN Transistor | Hi-Sincerity Mocroelectronics |
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HLB123SA | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
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HLB123T | NPN Transistor | Hi-Sincerity Mocroelectronics |
| Part Number | Description |
|---|---|
| HLB124E | NPN Transistor |