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HLB123D Datasheet Preview

HLB123D Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High voltage
·High speed switching
·Low Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·The HLB123D is designed for high voltage,high speed
switching inductive circuits and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
600
V
VCER
Collector-Emitter Voltage RBE=150Ω
600
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Tc=25
TJ
Junction Temperature
1
A
30
W
-55~150
Tstg
Storage Temperature Range
-55~150
HLB123D
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

HLB123D Datasheet Preview

HLB123D Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=100mA; IB= 10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=300mA; IB= 30mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC=100mA; IB= 10mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC=300mA; IB= 30mA
ICBO
Collector Cutoff Current
VCB= 600V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 300mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 500mA ; VCE= 5V
hFE-3
DC Current Gain
IC= 1A ; VCE= 5V
HLB123D
MIN TYP. MAX UNIT
0.8
V
0.9
V
1.2
V
1.8
V
10 μA
10 μA
10
50
10
6
hFE-1 Classifications
B1
B2
B3
B4
B5
B6
B7
B8
10-17 12-22 18-27 23-32 28-37 33-42 38-47 43-50
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number HLB123D
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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HLB123D Datasheet PDF





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