HLB123D is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Hi-Sincerity Mocroelectronics |
HLB123D | NPN Transistor |
|
Hi-Sincerity Mocroelectronics |
HLB123I | NPN Transistor |
|
Hi-Sincerity Mocroelectronics |
HLB123SA | NPN EPITAXIAL PLANAR TRANSISTOR |
|
Hi-Sincerity Mocroelectronics |
HLB123T | NPN Transistor |
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC=100mA; IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=300mA; IB= 30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC=100mA;.
