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IPP60R380C6 - N-Channel MOSFET

General Description

Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10.6 IDM Drain Current-Single Pulsed 3

Key Features

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  • Static drain-source on-resistance: RDS(on) ≤0.38Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IPP60R380C6，IIPP60R380C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10.6 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 83 Tj Max.