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Infineon Technologies Electronic Components Datasheet

BSS169N Datasheet

SIPMOS Small-Signal-Transistor

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SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
Product Summary
V DS
R DS(on),max
I DSS,min
BSS159N
60 V
8
0.13
A
SOT-23
Type
BSS159N
Package
SOT-23
Ordering Code
Q67042-S1488
Tape and Reel Information
E6327: 3000 pcs/reel
Marking
SGs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Reverse diode dv /dt
dv /dt
I D=0.23 A, V DS=60 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
V GS
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
0.23
0.18
0.92
6
±20
Class 1
0.36
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.0
page 1
2004-02-19


Infineon Technologies Electronic Components Datasheet

BSS169N Datasheet

SIPMOS Small-Signal-Transistor

No Preview Available !

Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Symbol Conditions
R thJA
BSS159N
min.
Values
typ.
Unit
max.
- - 350 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Saturated drain current
Drain-source on-state resistance
Transconductance
V (BR)DSS V GS=-10 V, I D=250 µA 60
V GS(th)
I D (off)
V DS=3 V, I D=26 µA
V DS=60 V,
V GS=-10 V, T j=25 °C
-3.5
-
I GSS
V DS=60 V,
V GS=-10 V, T j=125 °C
V GS=20 V, V DS=0 V
-
-
I DSS
V GS=0 V, V DS=10 V
130
R DS(on)
V GS=0 V, I D=0.07 A
V GS=10 V, I D=0.23 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=0.16 A
-
-
0.1
-
-2.8
-
-
-
-
3.9
1.8
0.19
-V
-2.4
0.1 µA
10
10 nA
- mA
8
3.5
-S
Rev. 1.0
page 2
2004-02-19


Part Number BSS169N
Description SIPMOS Small-Signal-Transistor
Maker INFINEON
Total Page 9 Pages
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