IRG4BC20MD transistor equivalent, insulated gate bipolar transistor.
* Rugged: 10µsec short circuit capable at VGS=15V
* Low VCE(on) for 4 to 10kHz applications
* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* Industry standard TO-220AB package
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