• Part: IRGPC30MD2
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 421.79 KB
Download IRGPC30MD2 Datasheet PDF
IRF
IRGPC30MD2
IRGPC30MD2 is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
Features - Short circuit rated -10µs @125°C, V GE = 15V - Switching-loss rating includes all "tail" losses TM - HEXFRED soft ultrafast diodes - Optimized for medium operating frequency ( 1 to 10k Hz) See Fig. 1 for Current vs. Frequency curve Short Circuit Rated Fast Co Pack IGBT VCES = 600V VCE(sat) ≤ 2.9V @VGE = 15V, IC = 16A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. TO-247AC Max. 600 26 16 52 52 12 52 10 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) Units µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. - - - - - Typ. - - 0.24 - 6 (0.21) Max. 1.2 2.5 - 40 - Units °C/W g...