* International Standard Package
* High Blocking Voltage
* Fast Switching
* Isolation Voltage 3000 V~
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density
* Low Gate Drive Requirement
* Easy to Mount with 2 Screws
* Intergra
IXBN75N170A Datasheet (241.79 KB)
IXBN75N170A
IXYS
241.79 KB
Bipolar mos transistor.
BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES = I = C90 VCE(sat) t = fi(typ) 1700V 42A 6.00V 60ns E Symbol VCES VCGR VGES .
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