IXBT20N360HV Description
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat) 3600V 20A 3.4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC.
IXBT20N360HV Key Features
- High Voltage Packages
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density