IXBT32N300, IXBH32N300 Datasheet - IXYS

IXBT32N300 Bipolar MOS Transistor

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = IC110 = VCE(sat) ≤ 3000V 32A 3.2V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body fo.

IXBT32N300 Features

* z High Blocking Voltage z International Standard Packages z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications: z Switched-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generators z Capacitor Discharge Circuits z AC

IXBH32N300-IXYS.pdf